Monday, April 19, 2021 |
Time |
|
Authors |
Paper Title |
8:00 |
|
Openning Ceremony |
8:15 |
|
8:30 |
|
Keynote |
8:45 |
|
Ravi Todi |
Semiconductor Industry: A story of unprecedented growth, and we are just getting started! |
9:00 |
|
9:15 |
|
9:30 |
D |
Francis Balestra |
The endless advances of Nanoelectronics |
9:45 |
10:00 |
D |
Andrea Leonardo Lacaita, Alessandro Spinelli and Christian Monzio Compagnoni |
High-Density Solid-State Storage: A Long Path to Success |
10:15 |
D |
Frank Schwierz and Martin Ziegler |
Six Decades of Research on 2D Materials: Progress, Dead Ends, and New Horizons |
10:30 |
10:45 |
D |
Montserrat Nafria, Javier Díaz Fortuny, Pablo Saraza-Canflanca, Javier Martin Martinez, Elisenda Roca, Rafael Castro Lopez, Rosana Rodríguez, Pablo Martín Lloret, Antonio Toro-Frias, Diego Mateo, Enrique Barajas, Xavier Aragones and Francisco Fernandez |
Circuit reliability prediction: challenges and solutions for the device time-dependent variability characterization roadblock |
11:00 |
11:15 |
D |
Lionel Trojman |
CMOS scaling and mobility: an unbearable ending? |
11:30 |
11:45 |
D |
Nagel Amaguayo, Ariana Musello, Pablo López, Lionel Trojman, Luis Miguel Prócel and José Bustamante |
Fabrication of Nanopores Using the Controlled Dielectric Breakdown Technique |
12:00 |
D |
Carlos E. Saavedra |
Active Circulators in Microwave and Millimeter-Wave Systems |
12:15 |
12:30 |
D |
Durgamadhab Misra |
What are the Research Opportunities in Electron Devices and Materials? |
12:45 |
13:00 |
D |
Roberto Carlos Molina Robles, Ronny García Ramírez, Alfonso Chacón Rodríguez, Renato Rimolo Donadio and Alfredo Arnaud |
An affordable post-silicon testing framework applied to a RISC-V based microcontroller |
13:15 |
M |
Marcos Vinicius Puydinger dos Santos, Fanny Béron, Jose Alexandre Diniz, Kleber Roberto Pirota and Ivo Utke |
A novel bottom-up approach for the fabrication of nanowire-based spintronic devices for room-temperature applications |
13:30 |
13:45 |
M |
Atsushi Shimbori, Hiu Yung Wong and Alex Huang |
Comprehensive Comparison of Fabricated 1.6-kV Punch-Through Design Ni/n-SiC Schottky Barrier Diode with Ar+ Implant Edge Termination and Heterojunction p-NiO/n-SiC Diode |
14:00 |
M |
Pedro Rosario and Fabiano Fruett |
Flexible Electrode Capacitive Sensors System for Human Fluid Detection |
14:15 |
M |
Joao Antonio Martino |
Field Effect Transistor Evolution: From MOSFET to BioFET |
14:30 |
14:45 |
M |
Carlos Henrique Santos Coelho, Joao Antonio Martino, Eddy Simoen, Anabela Veloso and Paula Ghedini Der Agopian |
Analysis of the ZTC-Point for Vertically Stacked Nanosheet pMOS Devices |
15:00 |
M |
Edmundo Gutiérrez |
Semiconductor materials and devices for medical and environmental applications |
15:15 |
15:30 |
M |
Christian Macambira, Paula Agopian and Joao Antonio Martino |
Impact of Positive Charges in a Fringing Field Bio-Tunnel-FET Device with Source Underlap |
15:45 |
M |
Flávio Enrico Bergamaschi and Marcelo Antonio Pavanello |
TCAD Evaluation of the Substrate Bias Influence on the Carrier Transport of Ω-Gate Nanowire MOS Transistors with Ultra-Thin BOX |
16:00 |
M |
Élkim Roa |
Low-Energy Always-On RISC-V based SoCs |
16:15 |
16:30 |
S |
Pritpal Singh |
Using Open-Source Hardware for Humanitarian Engineering Applications |
16:45 |
17:00 |
S |
Wilfrido Moreno |
Opportunities for Remote Laboratories Delivery to Support On-line Education under COVID-19 Conditions and Beyond |
17:15 |
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Tuesday, April 20, 2021 |
Time |
|
Authors |
Paper Title |
7:00 |
M |
Monika Shree K, M Jayadeep Reddy, K P Pradhan and Tejendra Dixit |
Development of Multi-physics Modeling of Plasmonics in the UV Region Using Transition Metals |
7:15 |
M |
Priyanka Pandey and Harsupreet Kaur |
Improved Device Performance of Polarity Controllable–Ferroelectric–Field Effect Transistor Under the Influence of Fixed Trap Charges |
7:30 |
M |
Abhiroop Bhattacharjee and Kavindra Kandpal |
A low power, charge-sensitive preamplifier integrated with a silicon nanowire biosensor |
7:45 |
M |
Suvendu Nayak, Saurabh Lodha and Swaroop Ganguly |
FULLY/PARTIALLY SUSPENDED GATE SiC-BASED FET FOR POWER APPLICATIONS |
8:00 |
M |
Suvendu Nayak, Saurabh Lodha and Swaroop Ganguly |
Hybrid gate dielectric with Si3N4 stressor for LDMOSFET |
8:15 |
M |
Mooli Shashank Reddy, Tejendra Dixit and Kp Pradhan |
Steep Subthreshold Swing in Double Gate NCFET:A Simulation Study |
8:30 |
M |
Rabia Aqeel, Ahsan Raza, Shaheer Ahmed, Muhammad Aashquin and Haider Ali |
Effect of Heat Sink Configuration on the Performance of Thermoelectric Refrigerator |
8:45 |
M |
Ravi Goel and Yogesh Chauhan |
Compact Modeling of Flicker Noise in High Voltage MOSFETs and Experimental Validation |
9:00 |
O |
Navakanta Bhat |
Monoenzymatic Serum Creatinine Biosensor for Early Diagnosis of Kidney DIsease |
9:15 |
9:30 |
O |
Khoirom Johnson Singh, Anand Bulusu and Sudeb Dasgupta |
Ultra-Scaled Multidomain P(VDF-TrFE) Organic Ferroelectric Gate Stack to the Rescue |
9:45 |
O |
Alfonsina Abat Amelenan Torimtubun, Josep Pallarès and Lluis F. Marsal |
Analysing the Efficiency Enhancement of Indoor Organic Photovoltaic using Impedance Spectroscopy |
10:00 |
O |
Magaly Ramírez-Como, Angel Sacramento, José G. Sánchez, Magali Estrada, Victor S. Balderrama and Lluis F. Marsal |
Impact of Hole Blocking Layer on the Performance of Solution-Processed Small Molecule Solar Cells |
10:15 |
O |
Rodrigo Picos, Mohamad Moner Al Chawa, Stavros Stavrinides and Leon Chua |
An Introduction to Memristor Compact Modelling using Thermistors as a case study |
10:30 |
O |
Dennis Cabrera García, José Enrique Eirez Izquierdo, Marco Roberto Cavallari and Fernando Josepetti Fonseca |
Cross-linked poly(4-vinylphenol) in thin-film transistors for water analysis |
10:45 |
M |
Tomislav Suligoj, Josip Zilak, Zeljko Osrecki and Marko Koricic |
Versatile BiCMOS Technology Platform for the Low-cost Integration of Multi-purpose Applications |
11:00 |
11:15 |
|
|
|
11:30 |
M |
Yiyi Yan, Denis Flandre, Valeriya Kilchytska, Sébastien Faniel, Xiaohui Tang and Jean-Pierre Raskin |
Determination of Carrier Lifetime in Silicon Using an Ultra-thin Al2O3/SiO2 Dielectric Stack |
11:45 |
M |
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12:00 |
M |
Viswanath G. Akkili, R Thangavel and Viranjay M. Srivastava |
Analysis on the Influence of Dielectrics and Channel Defects on the Electrical Performance of p-Channel TFTs for CMOS Applications |
12:15 |
M |
Diego Barrettino |
A Simple Method for Seamless Integration of CMOS Chips with Microfluidics |
12:30 |
M |
Karthi Pradeep, Marina Deng, Benjamin Dormieu, Patrick Scheer, Magali De Matos, Thomas Zimmer and Sebastien Fregonese |
Influence of Calibration Methods and RF Probes on the RF Characterization of 28FD-SOI MOSFET |
12:45 |
M |
Enas Moustafa, José Guadalupe Sánchez López, Lluis Marsal and Josep Pallares |
ZnO Thin Film Deposited by Spray Pyrolysis for Long-Term Stable Organic Solar Cells |
13:00 |
M |
Kevin Vicuña |
The Dual Mode Logic (DML) |
13:15 |
13:30 |
M |
Andrea Natale Tallarico, Nick Posthuma, Benoit Bakeroot, Steefan Decoutere, Claudio Fiegna and Enrico Sangiorgi |
Improving Time-Dependent Gate Breakdown of GaN HEMTs with p-type Gate |
13:45 |
14:00 |
M |
Carlos Ascencio-Hurtado, Alfonso Torres, Roberto Ambrosio and Mario Moreno |
High conductivity intrinsic a-SiGe films deposited at low-temperature |
14:15 |
M |
Marcelo Antonio Pavanello, Antonio Cerdeira, Thales Ribeiro and Fernando Avila-Herrera |
Analytical Compact Model for Transcapacitances of Junctionless Nanowire Transistors |
14:30 |
14:45 |
M |
Eliana Acurio |
Reliability Assessment of AlGaN/GaN Schottky Barrier Diodes under ON-state stress |
15:00 |
15:15 |
M |
Silvestre Salas-Rodríguez, Jaime Martinez-Castillo, Francisco López-Huerta, A. L. Herrera-May and Joel Molina-Reyes |
Recent advances of Ion sensing based on Flexible Low Temperature Thin Film Transistors |
15:30 |
M |
Paul Berger |
Fully Printed Flexible Internet-of-Things Nodes with Energy Scavenging and Non-toxic Energy Storage |
15:45 |
16:00 |
M |
Omar Lopez-Lopez, Jairo Mendez-V. and Edmundo Gutierrez |
Trapping Induced Barrier Raising (TIBR) in SOI MOSFETs |
16:15 |
|
|
|
16:30 |
M |
Toshiro Hiramoto |
Recent Progress of Silicon IGBT technologies |
16:45 |
17:00 |
M |
Edward Yi Chang |
An Enhancement–Mode GaN FEG-HEMT(Hybrid Ferroelectric Charge Trap Gate Stack) Device for Power Switching Applications. |
17:15 |
17:30 |
|
Keynote |
17:45 |
|
Martin Green |
Can Solar PV save the World? |
18:00 |
|
18:15 |
|
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Wednesday, April 21, 2021 |
Time |
|
Authors |
Paper Title |
7:00 |
|
Keynote |
7:15 |
|
David Atienza |
Energy-Scalable Many-Core Servers: Follow Your Brain! |
7:30 |
|
7:45 |
|
8:00 |
5G |
Luis Andia |
Trends and innovation on engineering substrates for 5G and beyond |
8:15 |
8:30 |
5G |
Aarti Rathi, Purushothaman Srinivasan, Fernando Guarin and Abhisek Dixit |
Impact of Hot Carrier Degradation on DC and RF Performance of 45-nm Power Amplifier Cell |
8:45 |
9:00 |
5G |
Peter Asbeck |
Transistor Technologies for Millimeter-Wave 5G Communications: The Struggle for Power |
9:15 |
9:30 |
5G |
Fernando Guarín |
SOI Reliability considerations for 5G/mmWave/RF Circuits |
9:45 |
10:00 |
M5 |
Daniel Tomaszewski and Wladek Grabinski |
Compact modeling of semiconductor devices for development of micro/nanoelectronic and MEMS technologies |
10:15 |
10:30 |
M5 |
Ahmed Alqurashi and Mohamed Missous |
Physical Modeling of Asymmetric Spacers Resonant Tunneling Diodes (RTDs) |
10:45 |
M5 |
Josef Weinbub, Mauro Ballicchia, Mihail Nedjalkov and Siegfried Selberherr |
Electromagnetic Coherent Electron Control |
11:00 |
11:15 |
M7 |
Alexander Kloes |
Multiscale simulation: Can compact models be more than a one-way bridge between TCAD and circuit simulation? |
11:30 |
11:45 |
5G |
Jean-Pierre Raskin |
SOI technologies for RF and millimeter-wave integrated circuits |
12:00 |
12:15 |
M6 |
Christian Römer, Ghader Darbandy, Mike Schwarz, Jens Trommer, André Heinzig, Thomas Mikolajick, Walter Weber, Benjamín Iñíguez and Alexander Kloes |
Uniform DC Compact Model for Schottky Barrier and Reconfigurable Field-Effect Transistors |
12:30 |
M7 |
Martin Vanbrabant, Lucas Nyssens, Valeriya Kilchytska and Jean-Pierre Raskin |
Assessment of RF compact modelling of FD SOI transistors |
12:45 |
M3 |
Isai S. Hernandez, Salvador I. Garduño, Antonio Cerdeira, Benjamin Iñiguez and Magali Estrada |
High Mobility Hf-In-ZnO TFTs, with HfO2 as Dielectric for Low Voltage Operation Range |
13:00 |
M6 |
Julia Cristina Soares Sousa, Paula Ghedini Der Agopian and Joao Antonio Martino |
Simple Analytical Modelling of an Electronically Tunable Potentiometer and Body Factor Influence |
13:15 |
M7 |
Lucas Mota Barbosa da Silva and Michelly de Souza |
Strategy for Simulation of Analog Circuits with GCSOI MOSFET using BSIM SOI model |
13:30 |
M7 |
Gilson Wirth, Mauricio Banaszeski da Silva and Thiago Both |
Towards Unifying the Statistical Modeling of Charge Trapping in Time and Frequency Domain |
13:45 |
14:00 |
M7 |
Abhishek Raol, Tom Jiao, Chandana Shashidhara and Hiu Yung Wong |
Fully-Coupled Simulation of the Temperature Effect on Negative Capacitance Ferroelectric Devices |
14:15 |
M7 |
Adelmo Ortiz-Conde, Orlando Trejo and Francisco J. García-Sánchez |
Direct extraction of solar cell model parameters using optimization methods |
14:30 |
14:45 |
M7 |
Kevin Ordaz and Joel Molina |
2D array microelectrodes for the detection of the action potential of the sinoatrial node |
15:00 |
M7 |
Hieu Nguyen, Ravi Teja Velpula and Barsha Jain |
High Efficiency AlInN Nanowire Light-Emitting Diodes Grown by Molecular Beam Epitaxy |
15:15 |
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15:30 |
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16:00 |
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16:15 |
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16:30 |
|
Closing Ceremony |
16:45 |
|
17:00 |
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INTEL WIE: The value of the female engineer in today’s market: Paula Sancho click to register |