Preliminary Program
All times are listed in Puebla, México local time (UTC -5)
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MOS-AK Workshop
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| 9:00-13:00 | MOS-AK/LAEDC Workshop |
| T_0 | MOS-AK Workshop Opening |
| Benjamin Iñiguez, Roberto Murphy and Wladek Grabinski | |
| MOS-AK | |
| Abstract: | |
| MOS-AK is HiTech forum to discuss the frontiers of electron device modeling with emphasis on simulation-aware compact/SPICE models and its Verilog-A standardization. The specific workshop goal will be to classify the most important directions for the future development of the electron device models, not limiting the discussion to compact models, but including physical, analytical and numerical models, to clearly identify areas that need further research and possible contact points between the different modeling domains. This workshop is designed for device process engineers (CMOS, SOI, BiCMOS, SiGe, GaN, InP) who are interested in device modeling; ICs designers (RF/Analog/Mixed-Signal/SoC/Bio/Med) and those starting in that area as well as device characterization, modeling and parameter extraction engineers. The content will be beneficial for anyone who needs to learn what is really behind the IC simulation in modern device models. | |
| 9:00-11:00 | MOS-AK Workshop Session (I) |
| T_1 | FETs as detectors of THz radiation |
| Daniel Tomaszewski | |
| IMiF, Warszawa (PL) | |
| Abstract: | |
| TBD | |
| T_2 | Capacitance modelling of a transistor for RF Power Amplifiers in 5G applications. |
| Nagaditya Poluri and M. M. De Souza | |
| Uni. Sheffield (UK) | |
| Abstract: | |
| High efficiency modes such as continuum modes rely on the harmonic manipulation of the waveforms in power amplifiers to improve efficiency, output power and robustness against impedance mismatch. Their design benefits from accurate modelling of capacitances in the knee region of the transistor, which may not be easy to extract from measurement due to noise and uncertainty. A table-based model typically has to rely on interpolation and extrapolation for such bias points to ensure a continuous and differentiable behaviour. In this work, we propose a polynomial-based model which satisfies charge conservation at the gate terminal. This model can be used directly for Volterra based analysis to quantify the distortion from capacitors and to find cancellation mechanisms for the feedback capacitance, which is a problem especially for CMOS based amplifiers in 5G applications. | |
| T_3 | MOSFET mismatch characterization made easier: a 2-Transistor test array structure for a voltage-only measurement approach |
| Juan Brito* and Sergio Bampi** | |
| IMPINJ* and UFRGS** (BR) | |
| Abstract: | |
| MOSFET mismatch measurements and characterization are repetitive tasks that require a huge amount of measurements, testing time, and data post-processing. In this presentation, an array test structure and a measurement method are proposed. They extraordinarily improve mismatch measurement time with a reduced equipment setup, while maintaining a high statistical confidence level. The structure is based on the combination of two stacked MOS transistors and the measurement methodology relies on just two single DC voltage measurements. With a theoretical speed improvement of 30x, the method enables fast extraction of MOSFET mismatch parameters, useful to designers, such as AVTH and Aβ with less than 2% error. The data correlation coefficient between the traditional and the proposed method is not less than 0.94, obtained in bulk CMOS test chips, thus confirming the high statistical confidence of the extraction method. | |
| T_4 | Further considerations for RF CMOS compact modeling |
| Roberto Murphy | |
| INAOE, Puebla (MX) | |
| Abstract: | |
| Compact modeling of CMOS devices has advanced day by day in the last few decades, keeping abreast with the technological development of manufacturing processes with ever smaller minimum features. These advances have made it possible to design and built circuits for operation in high frequencies, reaching into the hundreds of GHz. Notwithstanding, as the frequency of operation increases, several second-order effects become apparent, and it is important to consider them at the design table in order to obtain more reliable simulations. Some of these have to do with parasitic effects of the interconnect lines; effects associated with inductors; connectors; and the like. Furthermore, higher operating frequencies make it possible to include antennas on-chip for a host of applications, but compact modeles for these have not been satisfactorily developed. This talk aims at presenting some of these considerations raising awareness of their importance in the modeling of RF CMOS circuits. | |
| 11:00-11:30 | Coffee break |
| 11:30-13:00 | MOS-AK Workshop Session (II) |
| T_5 | Compact modeling for TMD FETs |
| Benjamin Iñiguez | |
| URV (SP) | |
| Abstract: | |
| Compared to graphene, TMD materials offer the advantage of having the semiconductor properties which allow them to be used as essential components in logic integrated circuits. The small thickness for TMD semiconductors enables the ultimate scalability in FETs, due to a higher gate electrostatic controllability over the channel. To use those new devices in VLSI circuits, compact design-oriented models need to be developed. We review the physics of different structures of TMD FETs and aproaches to develop analytical equations of the I-V and C-V characteristics | |
| T_6 | On the Compact Modelling of Si Nanowire and Si Nanosheet MOSFETs |
| Antonio Cerdeira, Magali Estrada, Marcelo A. Pavanello | |
| CINESTAV (MX) | |
| Abstract: | |
| Nanowire and Nanosheet MOSFET devices also require precise analytical models that can be used in circuit simulators. In this presentation, we demonstrate that the Symmetric Doped Double-Gate Model (SDDGM) can be used for modelling Nanowires and Nanosheets, due to the specific characteristics of these structures and of the model SDDGM. In this paper, 3D TCAD simulations are used to confirm that the total channel width for these structures is equal to the perimeter of the transistor sheet, allowing to extend of the application of the Symmetric Doped Double-Gate Model (SDDGM) model to Nanowires and Nanosheets MOSFETs, with no need to include new parameters. The Model SDDGM is validated for this application using several measured and simulated structures of Nanowires and Nanosheets transistors, with different aspect ratios of fin width and fin height, showing very good agreement between measured or simulated characteristics and modelled. SDDGM is encoded in Verilog-A language and implemented in the SmartSPICE circuit simulator. | |
| T_7 | Towards Unified Compact Modeling of RTN (time domain), 1/f Noise (frequency domain) and BTI |
| Gilson Wirth | |
| UFRGS (BR) | |
| Abstract: | |
| Charge trapping produces Random Telegraph Noise (RTN - time domain), 1/f Noise (frequency domain) and Bias Temperature Instability (BTI - aging). A statistical compact modeling framework, based on discrete device physics quantities, is presented. Parameter extraction is addressed, showing that parameters extracted in frequency domain may be used to address time domain behavior, and vice-versa. Not only expected average behavior is addressed, but also the variability, enabling statistical analysis, including corner-based analysis. Electrical (SPICE) level simulation techniques are discussed. |
Mini Colloquium
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| Time | Speacker | Theme |
| 13:30 | Subramanian S, Iyer Ph.D. | Analog in-memory computing using the charge trap transistor |
| Machine learning and Inference are a significant portion of modern computing. Using conventional processors and accelerators including CPUs, GPUs, and custom ASICs, this computing is very memory intensive with frequent calls to memory which are extremely power hungry. Since the discovery of the memristor, there has been a resurgent interest in analog in-memory compute. Most often, this takes the form of a 1T-1R cell in a cross-point architecture. At UCLA CHIPS, we have been investigating the use of classical CMOS on SOI device used in a somewhat unconventional way. We call this device the Charge Trap Transistor and it’s a regular SOI NFET device whose threshold voltage can be controllably and reversibly changed by self-heating assisted trapping in the HiK dielectric. The device is operated in the subthreshold and a small change in the subthreshold voltage can cause a large change in the sub-threshold drain current. We can show 1000X dynamic range with an effective bit resolution of as much as 5-6 bits. In this talk, we will describe this work, including programming schemes, temperature stability and simple MAC (multiply and accumulate) operations. The CTT is a robust device for in-memory analog compute and promises to enable a viable and resilient edge-based inference engine especially for embedded and IoT applications. | ||
| 14:30 | Felix Palumbo Ph.D. | Dielectric breakdown in thin dielectrics. From silicon dioxide to layered dielectrics |
| Thin dielectrics are the fundamental stone over which semiconductor industry experienced its huge development. As the key element for manufacturing Metal Oxide Semiconductor Field Effect Transistors, guaranteeing the reliability of gate oxides has become more challenging with the pushing demands of the markets for improved performance in electronic devices. In this framework, understanding not only the statistics but the physical phenomena behind dielectric breakdown is crucial to ensure the reliability of modern and future electronic devices. In this lecture, the fundamentals of thin dielectric breakdown and the state of the art of breakdown studies on novel materials is summarized, focusing on the physical phenomena that characterize thin film dielectric breakdown and the perspectives on novel 2D materials, that demonstrate remarkable potential to be applied as gate insulators in future nano-electronic devices. | ||
| 15:30 | Lluis F. Marsal Ph.D. | Efficient and Stable Organic Solar Cells for Versatile Applications |
| Organic solar cells are considered as a promising renewable energy source because of their light-weight, high transparency, possibility of fabrication in large areas and inexpensive solar energy production. These solar cells are based in the junction of two different organic semiconducting materials, one donor and one acceptor. The most efficient devices to date are the bulk heterojunction cells, obtained from a mixture of the donor and acceptor materials, which provides an enormous interfacial surface. In the last years, advances in polymer-based organic solar cells have been possible due to different approaches such as design of new structures and synthesis of new materials such as small molecule and polymers with low band-gaps, control of the nanoscale morphology, new interfacial transport layers, variation of the ratio of the donor/acceptor in the bulk heterojunction, application of thermal or solvent annealing process, among others [1-4]. As a result, recently, power conversion efficiencies over 18% are obtained [5]. However, there are still room for improving and some problems should be solved such as the stability, and degradation process of the polymer solar cells [6-7]. In this lecture, we will present the perspectives and recent advances made in polymer solar cells, design and synthesis of new polymers and in particular the active layer morphology, interfacial layers and stability. We will also discuss the basic device operation and various parameters limiting their efficiency and their possible improvements. |
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| 16:30 | Dr. Edmundo A. Gutiérrez D. | Cryogenic Energy Efficiency and reliability of 65 nm and 14nm FinFets for Quantum Computing Applications |
| Although computing requires cryogenic temperatures to operate properly, these days it has become a hot topic, so special attention is required. In this talk I will focus on talking about CMOS technology, and its operation at cryogenic temperatures (4.2 K and below). Various CMOS technologies are being considered for potential use as control and reading systems for in-situ Qubits. That is, the possibility of placing the electronics as close as possible to the Qubits array. However, for this to be possible it is necessary to analyze energy efficiency and electro-thermal coupling. |
LAEDC 2022 DAY 1
| 08:00 | Registration 7:30 a.m. – 5:30 p.m | |||
| 08:30 | Opening Ceremony Edmundo Gutierrez, PhD., LAEDC Chair IEEE EDS Welcome Fernando Guarin, PhD., EDS Senior Past President Keynote: “Hunting a supermassive black-hole in the center of the Milky Way with the Event Horizon Telescope” David Hughes, PhD. |
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| 09:30 | Coffee Break | |||
| Session 1A THz Session Chair: Fernando Guarin | Session 1B 2D - Cryogenic Session Chair: Edmundo Gutierrez |
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| 10:00 | 35 - François Danneville | Challenges to measure RF noise and intermodulation performances of mmW/THz devices | Theresia Knobloch | Scalable and Reliable Gate Insulators for 2D Material-Based FETs |
| 10:30 | 37 - Daniel Tomaszewski, Michał Zaborowski, Jacek Marczewski and Paweł Bajurko | Field-Effect Transistors as THz radiation detectors | 119 - Giuseppe Iannaccone | Analog neuromorphic circuits using devices based on 2D materials and on CMOS technology |
| 11:00 | 11 - Yunfan Peng and Liguo Sun | A Compact HMSIW Coupler Based on Slow Wave Structures | 112 - Enrique G. Marin | 2DM-based nanoelectronic devices from a multiscale perspective (invited) |
| 11:15 | 17 - Ahmed Alqurashi, James Sexton and Mohamed Missous | Develpoment of 100 GHz resonant tunnelling diodes based oscillator | ||
| 11:30 | 31 - Palak Srivastava, Km Anjali and Amanpreet Singh Saini | Design Of a Siw Based Slot Antenna For Terahertz Frequency | 93 - Masayuki Ichikawa, Takahisa Tanaka, Ken Uchida, Tomohisa Miyao, Munehiro Tada and Hiroki Ishikuro | In Situ Monitoring Technique of Self-Heating in Bulk MOSFETs at Cryogenic Temperatures using Subthreshold Current |
| 11:45 | 80 - Lucas Nyssens, Martin Rack, Dimitri Lederer and Jean-Pierre Raskin | Effect of probe coupling on MOSFET series resistance extraction up to 110 GHz | 97 - J. Federico Ramirez Rios, Alfonso Pérez Garcia, Mario Moreno Moreno and Alfredo Morales Sánchez | 2D simulation of the resistive state in bipolar resistive switching memories based on oxygen vacancies |
| 12:00 | 39 - Eduardo Ibarra Medel, Miguel Velázquez, Daniel Ferrusca and Stan Kurtz | Design and construction of a Low-Noise L-Band Amplifier for the Tulancingo I radio Telescope. | 69 - Jairo Méndez-V., Dragica Vasileska, Katerina Raleva and Edmundo A. Gutiérrez-D. | Modeling Self-Heating Effects in Nanometer SOI Devices at Cryogenic Temperatures |
| 12:15 | 41 - Omar Jordán-García, Eloy Ramírez-García, David Jiménez and Anibal Pacheco-Sanchez | Lumped model-based analysis of hBN RF switches | ||
| 12:30 | Lunch | |||
| Session 2A1 THz Session Chair: Fernando Guarin | Session 2B Semiconductor-, MEMS- and Nanotechnologies Session Chair: Mario Moreno |
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| 14:00 | 135 - Cristell Maneux | Circuit Design Flow dedicated to 3D vertical nanowire FET | 12 - Danial Bavi and Sourabh Khandelwal | Self-consistent Compact Modeling of First- and Third Quadrant I-V behavior in SiC MOSFETs |
| 14:30 | 25 - Christoph Jungemann, Maziar Noei and Tobias Linn | Device Simulation of the Dyakonov-Shur Plasma Instability for THz Wave Generation | 28 - Rituraj S. Rathore, Ashwani K. Rana and Viranjay M. Srivastava | Impact of Oxide Thickness Fluctuation for Resist- and Spacer-Defined FinFETs |
| 14:45 | 30 - Jesús Jiménez-León, Arturo Sarmiento and Pedro Rosales Quintero | An Electrostatic Compact Model for Experimental Memristive Devices | ||
| 15:00 | 29 - Pascal Xavier and Tan Phu Vuong | RF printed electronic devices using bio-sourced materials: risks and opportunities | 50 - Flávio Enrico Bergamaschi, Gilson I. Wirth, Sylvain Barraud, Mikaël Cassé, Maud Vinet, Olivier Faynot and Marcelo Antonio Pavanello | Extraction of the Back Channel Mobility in SOI Nanowire MOS Transistors under Substrate Biasing |
| 15:15 | 68 - Fernando J. Costa, Renan Trevisoli and Rodrigo T. Doria | Ultra-Low-Power Diodes Composed by SOI UTBB Transistors | ||
| 15:30 | Session 2A2 HAC Workshop Sampathkumar Veeraraghavan IEEE HAC Chair | 81 - Carlos Ascencio-Hurtado, Alfonso Torres, Roberto Ambrosio, Mario Moreno and Alba Arenas-Hernandez | Evaluation of the influence of hydrogen dilution ratio and doping on the properties of a-SiGe:H films | |
| 15:45 | 91 - Braulio Palacios-Márquez, Zeuz Montiel-González, Sergio Alfonso Pérez-García, Mario Moreno-Moreno and Alfredo Morales-Sánchez | Study of the resistive switching behavior in Si/N:SiOx (x<2) multilayer-based MOS devices | ||
| Coffee Break & Poster Exhibition | ||||
| 16:00 | Session 3A Biomedical Devices Session Chair: Wilfrido Moreno | 92 - Arely Vazquez and Joel Molina | Fabrication and characterization of Schottky diodes for application in Schottky barrier MOSFETs | |
| Luis Kun | Disparities 2022 and the Global Citizen Safety and Security. A Transformational opportunity for Engineers as Systems “Conductors” of Society Critical Thinking | Session 3B Temperature Dependence Session Chair: Benjamín Iñíguez |
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| 16:15 | 5 - Omar López López, Ismael Martínez Ramos, Daniel Durini Romero, Daniel Ferrusca Rodríguez, Edmundo Gutiérrez Domínguez and Adelmo Ortíz Conde | Parameter extraction in a 65nm nMOSFET technology from 300 K down to 3.8 K | ||
| 16:30 | 9 - Juan Fernando Galindo Jaramillo and Ramon Adrian Salinas Franco | Portable Technology of Low-Cost Image Digitizing for the Screening of Uterine Cancer in Latin America | 64 - Michelly de Souza, Antonio Cerdeira, Magali Estrada, Sylvain Barraud, Mikaël Cassé, Maud Vinet, Olivier Faynot and Marcelo Antonio Pavanello | Analysis of the Gate-Induced Drain Leakage of SOI Nanowire and Nanosheet MOS Transistors at High Temperatures |
| 16:45 | 86 - Loukas Chevas, Nikolaos Makris, Maria Kayambaki, Thanasis Kostopoulos, Antonis Stavrinidis, George Konstantinidis and Matthias Bucher | A Contribution to GaN HEMT Modeling and Parameter Extraction Including Temperature Dependence | ||
| 17:00 | 104 - Camila Alves, Michelly de Souza and D'Oliveira Ligia | Comparative Analysis of Transcapacitances in Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs | ||
| 17:15 | 114 - Shruti Pathak, Asifa Amin, Purushothaman Srinivasan, Fernando Guarin and Abhisek Dixit | Impact of Chuck Temperature on Flicker Noise (1⁄f) Performance of PDSOI n-channel MOSFETs (Invited) | ||
| 108 - Anuj Bhardwaj, Sujit Singh, Anand Mishra, David Petit, Francois Paolini and Abhisek Dixit | Effect of Negative Back Bias on FDSOI Device Parameters down to Cryogenic Temperature |
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| 17:30 | Keynote: “Invention of the Transistor 75 years ago; The Origin of Device Miniaturization towards Super-Intelligent Society” Hiroshi Iwai, PhD |
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| 18:30 | Cocktail Reception Panel session and networking Young Professionals and Women in Engineering |
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Biography: Sampathkumar Veeraraghavan is a globally renowned technologist best known for his technological innovations in addressing global humanitarian and sustainable development challenges. He is a seasoned technology and business leader with over 17 years of experience in the Top 500 Fortune companies. Throughout his career, he has led business-critical strategic R & D programs and successfully delivered cutting-edge technologies in the areas of Conversational Artificial Intelligence (AI), Natural Language Understanding, Cloud computing, Data privacy, Enterprise systems, Infrastructure technologies, Assistive and Sustainable technologies that were targeted to benefit millions of global users. Sampath served as an expert in the 2020 Broadband Commission working group on school connectivity co-chaired by UNESCO, UNICEF, and ITU to drive “GIGA,” a Global School Connectivity Initiative. He is the founder and president of “The Brahmam”.
His technological innovations and leadership excellence were featured in cover stories of global media such as IEEE TV, IEEE spectrum, USA today, E-week, AI-news, IEEE Institute, and IEEE transmitter, The Bridge, and ACM-News. He received an M.S. degree in Electrical Engineering from Tufts University, Massachusetts, USA (2010) and a B.E. degree in Computer Science and Engineering from Anna University, India (2005). He is accredited with leading and delivering some of the industry-first programs in Artificial intelligence and computing technologies across multi-disciplinary domains. He currently works as a senior technology and program management leader in the conversational Artificial Intelligence industry where he spearheads a portfolio of science and engineering programs to advance spoken language innovations.
LAEDC 2022 DAY 2
| 08:00 | Registration | |||
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| 08:30 | Session Chair: Edmundo Gutierrez Keynote: “Chips, dies, chiplets and dielets and heterogeneous integration” Subramanian Iyer, PhD. |
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| 09:30 | Coffee Break | |||
| Session 4A Semiconductor reliability Session Chair: Fernando Guarin | Session 4B Circuit-device interaction Session Chair: Lionel Trojman |
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| 10:00 | 58 - Fernando Guarin and Purushothaman Srinivasan | Practical Considerations and methodology for the reliability evaluation of 5G SOI Technologies (Invited) | 116 - Javier Diaz-Fortuny, Pablo Saraza-Canflanca, Michiel Vandemaele, Erik Bury, Robin Degraeve and Ben Kaczer | Dedicated ICs for the Characterization of Variability and Aging Studies and their Use in Lightweight Security Applications |
| 10:30 | 20 - Sebastian Matias Pazos, Fernando Leonel Aguirre, Felix Palumbo and Fernando Silveira | Reliability-Aware Design Space Exploration for Fully Integrated RF CMOS PA | 8 - Alejandro David Martinez Rojas | Front-End electronics to read out thin Ultra-Fast Silicon detectors for ps resolution FAST3 |
| 10:45 | 54 - Manuel Almada, Federico Sandoval and Rodolfo Sanchez | Integrated NMOS Differential Amplifier | ||
| 11:00 | 61 - Fernando Silveira | Reliability Aware Design of RF Circuits | 82 - Silvana Guitarra, Lionel Trojman, Laurent Raymond and Martín Gavílanez | Analysis of the reset transition in bipolar HfO2- based ReRAM to improve modeling accuracy |
| 11:15 | 90 - Silvestre Salas-Rodríguez, Jaime Martínez-Castillo and Joel Molina-Reyes | Optimization of a-SiGe:H Thin Film Transistors whit HfO2 as gate insulator by TCAD simulations | ||
| 11:30 | 57 - Gerardo Malavena, Jurij Lorenzo Mazzola, Matteo Greatti, Christian Monzio Compagnoni, Andrea Leonardo Lacaita, Vincenzo Marano, Michele Lauria, Dario Paci, Fabrizio Speroni and Alessandro Sottocornola Spinelli | Investigation of the Statistical Spread of the Time-Dependent Dielectric Breakdown in Polymeric Dielectrics for Galvanic Isolation | 94 - Ricardo Bolanos-Perez, Alejandro Diaz-Sanchez, José Miguel Rocha-Perez, Jaime Ramirez-Angulo, Alejandro Bautista and Pedro Isaac Morales-Lopez | Low Voltage and Low Power AC Coupled Instrumentation Amplifier |
| 11:45 | 101 - Daniel Flores, Cinthia Irias and Daniel Martínez | Modular design of the Digital Control and Measurement System of a Falling Weight Deflectometer | ||
| 12:00 | 27 - Shivendra K. Rathaur, Tsung-Ying Yang, Chih-Yi Yang, Edward Yi Chang, Heng-Tung Hsu and Abhisek Dixit | Time-dependent Multiple Gate Voltage Reliability of Hybrid Ferroelectric Charge Trap Gate Stack (FEG) GaN HEMT for Power Device Applications | ||
| 12:15 | 44 - Carlos Alfredo Pelcastre Ortega and Mónico Linares Aranda | An alternative radiation hardened by layout design in a CMOS technology | ||
| 12:30 | Lunch | |||
| Session 5A Novel materials and process modules Session Chair: Arturo Escobosa | Session 5B Modeling and simulation Session Chair: Benjamín Iñíguez |
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| 14:00 | 66 - Radu A. Sporea | Design routes toward optimal contact-controlled thin-film transistors | Lionel Trojman | The III-V materials as new perspective for the electronic power applications: the specific case of the Energy Harvester system |
| 14:30 | 103 - Marco Fattori and Eugenio Cantatore | Flexible sensing surfaces based on printed electronics | 4 - Shubhankar Sharma, Yi Zheng and Hiu Yung Wong | Short Circuit Ruggedness of Trench Filled Superjunction Devices |
| 14:45 | 14 - Antonio Cerdeira, Magali Estrada, Genaro da Silva, Jaime Rodrigues and Marcelo Pavanello | Modeling of silicon stacked nanowire and nanosheet transistors at high temperatures | ||
| 15:00 | 115 - Wei Zhao, Subimal Majee and Abhilash Sugunan | An Eco-friendly graphene ink for inkjet printing | 15 - Andres Felipe Jaramillo Alvarado, Pedro Rosales Quintero, Alfonso Torres Jacome and Francisco Javier De la Hidalga Wade | Nonlinear Applications, State Equations and Simulations for Piezoelectric Materials |
| 15:15 | 16 - Malte Koch, Hsing Tseng, Anton Weissbach, Benjamin Iniguez, Karl Leo, Alexander Kloes, Hans Kleemann and Ghader Darbandy | Numerical Modeling of Organic Electrochemical Transistors | ||
| 15:30 | 7 - Israel E. Zapata De Santiago and Alfonso Torres Jacome | Test structures for ZT thin-film thermoelectric characterization using laser as a heat source | 18 - Priyanshi Goyal and Harsupreet Kaur | Exploring the suitability of Dual Step Gate Oxide Design on β – Ga2O3 MOSFET for High Power Microwave Applications – Part I |
| 15:45 | 67 - Ananya Bhattacharjee and Ratul Kumar Baruah | Electrical Performance of Fractal Web as Flexible Interconnects | 48 - Viswanathan Naveen Kumar, Dragica Vasileska and Michael Povolotskyi | Modeling Alloy Clustering Limited Low-Field Electron Mobility in GaN FinFETs |
| Coffee Break & Poster Exhibition | ||||
| Session 6A Novel materials and process modules Session Chair: Lluis Marsall | Session 6B Panel session in Humanitarian Technology Session Chair: Mario Aleman |
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| 16:00 | 62 - Khoirom Johnson Singh, Lomash Chandra Acharya, Mahipal Dargupally, Anand Bulusu and Sudeb Dasgupta | Post-CMOS Devices: Landau’s Anisotropy Sensitivity Analyses for Organic Ferroelectric Gate Stack and Its Application to NCTFET | Invited Panelists: + Pritpal Singh, PhD + Sampath Veer. + Morgan Kiani, PhD + Luis Kun, PhD |
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| 16:30 | 98 - Alba Arenas-Hernandez, Carlos Zuñiga, Alfonso Torres Jacome, Mario Moreno, Julio César Mendoza Cervantes, Carlos Roberto Ascencio-Hurtado and Abdu Orduña-Díaz | Chemical polishing of titanium foil and detachment of TiO2 nanotubes as key synthesis parameters to gas sensing applications | ||
| 16:45 | 99 - Cesar de Jesus Alarcon-Hernandez, Alba Arenas-Hernandez, Abel Garzon-Roman and Carlos Zuñiga-Islas | Comparison of TiO2 nanoparticles and Fe3O4@TiO2 core-shell nanostructures and their photocatalytic activity | ||
| 17:00 | 107 - Juan Ponce-Hernández, Antonio Estrada-Torres, Eloy Rodriguez-Vázquez and Victor S. Balderrama | On-Line PEM Fuel Cell Hydration Marker Based on Frequency Response Analysis | ||
| 17:30 | Keynote: “Recent Developments and Future Trends in Solar Photovoltaics” Martin Green, PhD |
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| 19:00 | Dinner Gala - 7pm Best Paper Award |
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LAEDC 2022 DAY 3
| 08:00 | Registration | |||
| 08:30 | Session Chair: Edmundo Gutierrez “OTFT neuro-inspired circuits for classification tasks” Laurie E. Calvet, PhD. “Integrating new technology elements to enable a 4000+ qubit quantum computer” Ricardo Donaton, PhD. |
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| 09:30 | Coffee Break | |||
| Session 7A1 Electron Devices for Quantum Computing Session Chair: Edmundo Gutierrez | Session 7B Technology roadmaps Session Chair: Mario Aleman |
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| 10:00 | 123 - Ricardo Donaton | Integrating new technology elements to enable a 4000+ qubit quantum computer - INVITED | 131 - Ali Shiri Sichani, Kishore Kumar Kadari and Wilfrido A. Moreno | Efficient Signaling for Passive Memristive Crossbars to Prepare them for Spiking Neuromorphic Computing |
| 10:30 | Stefan van Waasen | How to build a universal quantum computer? – The scaling challenge | 32 - Esteban A. Sanabria Villalobos, Luis A. Chavarría Zamora and Leonardo Araya Martínez | A Novel Proposal for a Standalone Compressor and Decompressor Hardware Module from ISA |
| 10:45 | 33 - Anika Zaman and Hiu Yung Wong | Study of Error Propagation and Generation in Harrow-Hassidim-Lloyd (HHL) Quantum Algorithm | 34 - Roberto Pereira Santos and Luis Alberto Chavarria Zamora | Development of a UAV system for estimation of structure from movement for a random target |
| 11:00 | 85 - Joel Molina-Reyes | ALD for Advanced Logic, Memory, Sensing and Quantum Technologies | 40 - Ernesto Franco and Alfonso Torres | High electrical conductivity of P type a-SiGe:H films deposited by PECVD |
| 11:15 | 102 - Harsaroop Dhillon and Hiu Yung Wong | Simulation of Single-shot Qubit Readout of a 2-Qubit Superconducting System with Noise Analysis | 75 - Luis Alberto Esperanza Hernandez and Victor Rodolfo Gonzalez Diaz | Algorithm for ECG Signal Delineation through Delta-Sigma Modulation |
| – Session 7A2 – Computational Electronics – Session Chair: Edmundo Gutierrez | ||||
| 11:30 | Dragica Vasileska | Computational Electronics: An Overview | 78 - Laura Vanesa De Arco Barraza, Maria José Pontes, Marcelo Eduardo Vieira Segatto, Maxwell E. Monteiro, Carlos A. Cifuentes and Camilo A. R. Díaz | Optical Fiber Angle Sensors for the PrHand Prosthesis: Development, and Application in Grasp Types Recognition with Machine Learning |
| 11:45 | 88 - Marcos Reich, Anselmo Frizera and Camilo Arturo Rodríguez Díaz | Approximate modelling based on genetic algorithm for a POF force sensor for Human-Robot Interaction in Robotic Walker | ||
| 12:00 | Allan Granados | System modeling using GO and KPN networks | 89 - Ignacio Marín Aguilar, Luis Alberto Chavarrıa Zamora and Leonardo Araya Martinez | A practical approach to validate the authenticity of identity documents |
| Lunch | ||||
| Session 8A Optoelectronics, photovoltaic and photonic devices, and systems Session Chair: Lluis Marsall | Session 8B1 All electron-based devices Session Chair: Stefan van Waasen |
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| 14:00 | 1 - Enas Moustafa, Josep Pallares and Lluis Marsal | Dependency of Current Generated Upon Thermal Treatment Duration in Non-fullerene Organic Solar Cells | Gilson Wirth | The role of the observation window on the intra- and inter-device variability of RTN |
| 14:15 | 23 - Benisha Chris A and Somyaranjan Routray | Performance Analysis in Kesterite CZGS/CZGSe Quantum Wells towards high-Efficiency Photovoltaic Applications | ||
| 14:30 | 26 - Shibi Varku, S Routray and K P Pradhan | Contribution of Carrier Quantization Effect towards Performance of Nanostructured CFTS / CFTSe Solar Cells | 43 - Hans Kleemann, Amric Bonil, Juan Wang and Ghader Darbandy | Vertical Organic Transistors - Approaching the GHz-Threshold with Organic Devices |
| 14:45 | 49 - Mariano Aceves-Mijares, Xochilt Luna-Zempoalteca, Felix Aguilar, Denise Estrada-Wiese and Alfredo González-Fernández | Study of the effect of the aluminum gate on light absorption in a Wavesensor | 45 - Edmundo Gutierrez, Alan Otero and Xiomara Ribero | n-MOS transistor impact ionization boosted by cumulative stress degradation in a 250 nm SiGe BiCMOS technology |
| 15:00 | 77 - Magaly Ramírez-Como, Enas Moustafa, Alfonsina Abat Amelenan Torimtubun, José G. Sánchez, Josep Pallarès and Lluis F. Marsal | Preliminary Study of the Degradation of PM6:Y7 based Solar | 47 - Roberto Lacerda de Orio, Johannes Ender, Simone Fiorentini, Wolfgang Goes, Siegfried Selberherr and Viktor Sverdlov | About the Switching Energy of a Magnetic Tunnel Junction determined by Spin-Orbit Torque and Voltage-Controlled Magnetic Anisotropy |
| Session 8B2 – Sensors and actuators – Session Chair: Stefan van Waasen | ||||
| 15:15 | 83 - Mario Moreno, Daniel Ferrusca, Jose de Jesús Rangel, Jorge Castro, Julio Hernández, Ricardo Jiménez, Alfonso Torres, Arturo Ponce, Alfredo Morales, Rodrigo González, Eduardo Mota and Gabriela Amador | Towards an infrared camera based on polymorphous silicon-germanium microbolometer arrays | 21 - Enrique Prieto, Luis Abad, Antonio Cerdeira, Magali Estrada and Benjamín Iñiguez | Sensor readout circuit using AOSTFTs, for IGZO (In-Ga-ZnO) sensors |
| 15:30 | 56 - Diego Fernando Valencia Grisales and Claudia Reyes Betanzo | Design of a Thermal Microsensor for Air Flow Rate with Low Power Consumption and High Sensitivity | ||
| Coffee break | ||||
| Session 9A All electronbased devices Session Chair: Patricia Guzmán | ||||
| 16:00 | 96 - Jesús Miguel Germán-Martínez, Alfredo Morales-Sánchez, Braulio PalaciosMárquez and Mario Moreno-Mo | Study of the photoresponse of ITO/SiO2/Si/SiO2/Al MIS capactior structures | ||
| 16:15 | 70 - Stepan Petrosyan, Varsenik Khachatryan and Ashkhen Yesayan | Nanowire Array Solar Cells | ||
| 16:30 | 71 - Oscar Velandia, Mario Moreno, Ricardo Jiménez, Alfredo Morales, Alfonso Torres Jacome, Carlos Zúñiga, Pedro Rosales Quintero, Luis Hernandez and Netzahualcoyotl Carlos | Hydrogenated amorphous silicon germanium films doped with nitrogen (a-SiGe:H,N) to improve the long-wave infrared (LWIR) region absorption | ||
| 16:45 | 72 - Aura Ximena González Cely, Teodiano Freire Bastos-Filho and Camilo Arturo Rodríguez Díaz | Wheelchair posture classification based on POF pressure sensors and machine learning algorithms | ||
| 17:00 | 73 - Francisco Javier Martinez-Rodriguez, Aldair Lara Tenorio, Rodriguez Sanchez Jorge, Alejandro Bautista-Castillo and José Miguel Rocha-Pérez | The Flipped Voltage Follower as a SuperRegenerative Receiver for Internet of Medical Things | ||
| 17:15 | 74 - Braz Baptista Junior, Maria Gloria Cano de Andrade, Luis Felipe de Oliveira Bergamim, Carlos Roberto Nogueira, Renan Baptista Abud and Eddy Simoen | Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers | ||
| 18:30 | Closing Ceremony |
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